Infineon BFR93AE6327HTSA1 NPN Transistor, 35 mA, 12 V, 3-Pin SOT-23

RS Stock No.: 911-4726Brand: InfineonManufacturers Part No.: BFR93AE6327HTSA1
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Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

15 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

6000 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+175 °C

Country of Origin

China

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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P.O.A.

Infineon BFR93AE6327HTSA1 NPN Transistor, 35 mA, 12 V, 3-Pin SOT-23

P.O.A.

Infineon BFR93AE6327HTSA1 NPN Transistor, 35 mA, 12 V, 3-Pin SOT-23

Stock information temporarily unavailable.

Stock information temporarily unavailable.

You may be interested in

Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

15 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

6000 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+175 °C

Country of Origin

China

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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