P-Channel MOSFET Transistor, 1.18 A, 20 V, 3-Pin SOT-23 Infineon BSS215P

RS Stock No.: 823-5484Brand: InfineonManufacturers Part No.: BSS215P
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

1.18 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 mW

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

3.6 nC @ 4.5 V

Width

1.3mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

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Stock information temporarily unavailable.

P.O.A.

P-Channel MOSFET Transistor, 1.18 A, 20 V, 3-Pin SOT-23 Infineon BSS215P

P.O.A.

P-Channel MOSFET Transistor, 1.18 A, 20 V, 3-Pin SOT-23 Infineon BSS215P
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

You may be interested in

Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

1.18 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 mW

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

3.6 nC @ 4.5 V

Width

1.3mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

You may be interested in