Infineon CoolMOS™ Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin TO 263 IPB60R099P7ATMA1

RS Stock No.: 222-4653Brand: InfineonManufacturers Part No.: IPB60R099P7ATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 1000) (ex VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin TO 263 IPB60R099P7ATMA1

1000

Available in multiples of 1000
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

P.O.A.

Each (On a Reel of 1000) (ex VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin TO 263 IPB60R099P7ATMA1
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon