Infineon OptiMOS™-T N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

RS Stock No.: 170-2295Brand: InfineonManufacturers Part No.: IPB64N25S320ATMA1
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

10.25mm

Length

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm

P.O.A.

Infineon OptiMOS™-T N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

P.O.A.

Infineon OptiMOS™-T N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

Stock information temporarily unavailable.

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

10.25mm

Length

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm