Infineon CoolMOS™ CE N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK IPD80R1K4CEATMA1

RS Stock No.: 214-4395Brand: InfineonManufacturers Part No.: IPD80R1K4CEATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.9V

Number of Elements per Chip

1

Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 2500) (ex VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK IPD80R1K4CEATMA1

P.O.A.

Each (On a Reel of 2500) (ex VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK IPD80R1K4CEATMA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.9V

Number of Elements per Chip

1