Infineon CoolMOS™ C7 N-Channel MOSFET, 17 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R125C7AUMA1

RS Stock No.: 222-4914Brand: InfineonManufacturers Part No.: IPL60R125C7AUMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

600 V

Package Type

ThinPAK 8 x 8

Series

CoolMOS™ C7

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Si

Number of Elements per Chip

1

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P.O.A.

Each (In a Pack of 2) (ex VAT)

Infineon CoolMOS™ C7 N-Channel MOSFET, 17 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R125C7AUMA1
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Standard

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Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
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14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Each (In a Pack of 2) (ex VAT)

Infineon CoolMOS™ C7 N-Channel MOSFET, 17 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R125C7AUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

600 V

Package Type

ThinPAK 8 x 8

Series

CoolMOS™ C7

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Si

Number of Elements per Chip

1