Infineon HEXFET P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 IRFTS9342TRPBF

RS Stock No.: 165-8190Brand: InfineonManufacturers Part No.: IRFTS9342TRPBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.75mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Stock information temporarily unavailable.

P.O.A.

Infineon HEXFET P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 IRFTS9342TRPBF

1

Available in multiples of 3000
1P.O.A.
3001P.O.A.
6001P.O.A.
9001P.O.A.
12001P.O.A.
15001P.O.A.
18001P.O.A.
21001P.O.A.
24001P.O.A.
27001P.O.A.
30001P.O.A.
33001P.O.A.
36001P.O.A.
39001P.O.A.
42001P.O.A.

P.O.A.

Infineon HEXFET P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 IRFTS9342TRPBF
Stock information temporarily unavailable.

1

Available in multiples of 3000
1P.O.A.
3001P.O.A.
6001P.O.A.
9001P.O.A.
12001P.O.A.
15001P.O.A.
18001P.O.A.
21001P.O.A.
24001P.O.A.
27001P.O.A.
30001P.O.A.
33001P.O.A.
36001P.O.A.
39001P.O.A.
42001P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.75mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.