IXYS HiperFET, Polar N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P

RS Stock No.: 194-524PBrand: IXYSManufacturers Part No.: IXFH16N50P
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

43 nC @ 10 V

Width

5.3mm

Minimum Operating Temperature

-55 °C

Height

21.46mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Stock information temporarily unavailable.

P.O.A.

IXYS HiperFET, Polar N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P
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Available in multiples of 1.

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25

Available in multiples of 1
25P.O.A.
26P.O.A.
27P.O.A.
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29P.O.A.
30P.O.A.
31P.O.A.
32P.O.A.
33P.O.A.
34P.O.A.
35P.O.A.
36P.O.A.
37P.O.A.
38P.O.A.
39P.O.A.

P.O.A.

IXYS HiperFET, Polar N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 1
25P.O.A.
26P.O.A.
27P.O.A.
28P.O.A.
29P.O.A.
30P.O.A.
31P.O.A.
32P.O.A.
33P.O.A.
34P.O.A.
35P.O.A.
36P.O.A.
37P.O.A.
38P.O.A.
39P.O.A.

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quantityUnit price
25 - 99P.O.A.
100 - 249P.O.A.
250 - 499P.O.A.
500+P.O.A.

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

43 nC @ 10 V

Width

5.3mm

Minimum Operating Temperature

-55 °C

Height

21.46mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS