IXYS HiperFET, Polar N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXFN80N50P
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
500 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.07mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
195 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
P.O.A.
1
P.O.A.
1
Stock information temporarily unavailable.
Please check again later.
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
500 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.07mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
195 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS