IXYS GigaMOS, HiperFET N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

Brand

Channel Type

N

Maximum Continuous Drain Current

132 A

Maximum Drain Source Voltage

250 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

23.25mm

Length

25.25mm

Typical Gate Charge @ Vgs

364 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

5.7mm

Country of Origin

Germany