IXYS GigaMOS, HiperFET N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

Brand

Channel Type

N

Maximum Continuous Drain Current

500 A

Maximum Drain Source Voltage

75 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

25.25mm

Typical Gate Charge @ Vgs

545 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

23.25mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.25V

Height

5.7mm