Nexperia N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115

RS Stock No.: 798-2895Brand: NexperiaManufacturers Part No.: PSMN0R9-25YLC,115
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Technical documents

Specifications

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1.25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.95V

Minimum Gate Threshold Voltage

1.05V

Maximum Power Dissipation

272 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Stock information temporarily unavailable.

P.O.A.

Nexperia N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 3.

Production -

Available in multiples of 3.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 3
1P.O.A.
4P.O.A.
7P.O.A.
10P.O.A.
13P.O.A.
16P.O.A.
19P.O.A.
22P.O.A.
25P.O.A.
28P.O.A.
31P.O.A.
34P.O.A.
37P.O.A.
40P.O.A.
43P.O.A.

P.O.A.

Nexperia N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 3.

Production -

Available in multiples of 3.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 3
1P.O.A.
4P.O.A.
7P.O.A.
10P.O.A.
13P.O.A.
16P.O.A.
19P.O.A.
22P.O.A.
25P.O.A.
28P.O.A.
31P.O.A.
34P.O.A.
37P.O.A.
40P.O.A.
43P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1.25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.95V

Minimum Gate Threshold Voltage

1.05V

Maximum Power Dissipation

272 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors