onsemi Dual N-Channel MOSFET, 500 mA, 25 V, 6-Pin SOT-363 FDG6303N
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
25 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
770 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
300 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
+8 V
Transistor Material
Si
Number of Elements per Chip
2
Length
2mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
1.64 nC @ 5 V
Width
1.25mm
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
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Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
25 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
770 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
300 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
+8 V
Transistor Material
Si
Number of Elements per Chip
2
Length
2mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
1.64 nC @ 5 V
Width
1.25mm
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.