onsemi P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD2955T4G

RS Stock No.: 463-038PBrand: onsemiManufacturers Part No.: NTD2955T4G
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

6.22mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Stock information temporarily unavailable.

P.O.A.

onsemi P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD2955T4G
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Available in multiples of 10.

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Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 10
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.
160P.O.A.
170P.O.A.
180P.O.A.
190P.O.A.

P.O.A.

onsemi P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD2955T4G
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 10
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.
160P.O.A.
170P.O.A.
180P.O.A.
190P.O.A.

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
50 - 190P.O.A.
200+P.O.A.

Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

6.22mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor