STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H2PAK-7 SCTH90N65G2V-7

RS Stock No.: 201-0869Brand: STMicroelectronicsManufacturers Part No.: SCTH90N65G2V-7
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

116 A

Maximum Drain Source Voltage

650 V

Series

SCTH90

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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P.O.A.

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H2PAK-7 SCTH90N65G2V-7
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Available in multiples of 1.

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Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H2PAK-7 SCTH90N65G2V-7
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

116 A

Maximum Drain Source Voltage

650 V

Series

SCTH90

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC