STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6

RS Stock No.: 876-5702PBrand: STMicroelectronicsManufacturers Part No.: STR2P3LLH6
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

30 V

Series

STripFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.75mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.3mm

Forward Diode Voltage

1.1V

Country of Origin

China

Product details

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Each (Supplied on a Reel) (ex VAT)

STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6
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P.O.A.

Each (Supplied on a Reel) (ex VAT)

STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

30 V

Series

STripFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.75mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.3mm

Forward Diode Voltage

1.1V

Country of Origin

China

Product details

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics