Toshiba TK090N65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

RS Stock No.: 206-9726Brand: ToshibaManufacturers Part No.: TK090N65Z,S1F(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090N65Z

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Stock information temporarily unavailable.

P.O.A.

Each (In a Pack of 2) (ex VAT)

Toshiba TK090N65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Each (In a Pack of 2) (ex VAT)

Toshiba TK090N65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S
Stock information temporarily unavailable.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090N65Z

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon