Vishay N-Channel MOSFET, 9.8 A, 200 V, 3-Pin TO-220FP IRFI640GPBF

RS Stock No.: 542-9664PBrand: VishayManufacturers Part No.: IRFI640GPBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.8 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

9.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

Vishay N-Channel MOSFET, 9.8 A, 200 V, 3-Pin TO-220FP IRFI640GPBF
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25

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25P.O.A.
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27P.O.A.
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29P.O.A.
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33P.O.A.
34P.O.A.
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36P.O.A.
37P.O.A.
38P.O.A.
39P.O.A.

P.O.A.

Vishay N-Channel MOSFET, 9.8 A, 200 V, 3-Pin TO-220FP IRFI640GPBF
Stock information temporarily unavailable.
Select packaging type

Production pack (Tape)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 1
25P.O.A.
26P.O.A.
27P.O.A.
28P.O.A.
29P.O.A.
30P.O.A.
31P.O.A.
32P.O.A.
33P.O.A.
34P.O.A.
35P.O.A.
36P.O.A.
37P.O.A.
38P.O.A.
39P.O.A.

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quantityUnit price
25 - 99P.O.A.
100 - 249P.O.A.
250+P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.8 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

9.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor