Vishay TrenchFET Dual N-Channel MOSFET, 69.3 A, 30 V, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3

RS Stock No.: 228-2939PBrand: VishayManufacturers Part No.: SiZ340BDT-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

69.3 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00856 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Transistor Material

Si

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET Dual N-Channel MOSFET, 69.3 A, 30 V, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET Dual N-Channel MOSFET, 69.3 A, 30 V, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

69.3 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00856 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Transistor Material

Si