onsemi Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949

RS Stock No.: 166-2630Brand: onsemiManufacturers Part No.: FDS8949
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

7.7 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

Automotive Dual N-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Stock information temporarily unavailable.

P.O.A.

onsemi Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949

P.O.A.

onsemi Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

7.7 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

Automotive Dual N-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.