STMicroelectronics N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerFLAT 5 x 6 STL40DN3LLH5

RS Stock No.: 188-8293Brand: STMicroelectronicsManufacturers Part No.: STL40DN3LLH5
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±22 V

Number of Elements per Chip

1

Width

5.1mm

Length

6.2mm

Typical Gate Charge @ Vgs

4.5 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

0.95mm

Automotive Standard

AEC-Q101

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerFLAT 5 x 6 STL40DN3LLH5

1

Available in multiples of 3000
1P.O.A.
3001P.O.A.
6001P.O.A.
9001P.O.A.
12001P.O.A.
15001P.O.A.
18001P.O.A.
21001P.O.A.
24001P.O.A.
27001P.O.A.
30001P.O.A.
33001P.O.A.
36001P.O.A.
39001P.O.A.
42001P.O.A.

P.O.A.

STMicroelectronics N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerFLAT 5 x 6 STL40DN3LLH5
Stock information temporarily unavailable.

1

Available in multiples of 3000
1P.O.A.
3001P.O.A.
6001P.O.A.
9001P.O.A.
12001P.O.A.
15001P.O.A.
18001P.O.A.
21001P.O.A.
24001P.O.A.
27001P.O.A.
30001P.O.A.
33001P.O.A.
36001P.O.A.
39001P.O.A.
42001P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±22 V

Number of Elements per Chip

1

Width

5.1mm

Length

6.2mm

Typical Gate Charge @ Vgs

4.5 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

0.95mm

Automotive Standard

AEC-Q101