Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1

RS Stock No.: 284-899Brand: InfineonManufacturers Part No.: IPT65R040CFD7XTMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Stock information temporarily unavailable.

P.O.A.

1 Reel of 1 (ex VAT)

Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1

2000

Available in multiples of 2000
2000P.O.A.
4000P.O.A.
6000P.O.A.
8000P.O.A.
10000P.O.A.
12000P.O.A.
14000P.O.A.
16000P.O.A.
18000P.O.A.
20000P.O.A.
22000P.O.A.
24000P.O.A.
26000P.O.A.
28000P.O.A.
30000P.O.A.

P.O.A.

1 Reel of 1 (ex VAT)

Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
Stock information temporarily unavailable.

2000

Available in multiples of 2000
2000P.O.A.
4000P.O.A.
6000P.O.A.
8000P.O.A.
10000P.O.A.
12000P.O.A.
14000P.O.A.
16000P.O.A.
18000P.O.A.
20000P.O.A.
22000P.O.A.
24000P.O.A.
26000P.O.A.
28000P.O.A.
30000P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC