Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
142 A
Maximum Drain Source Voltage
650 V
Series
SiC Power
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.012 Ω
Maximum Gate Threshold Voltage
4.3V
Number of Elements per Chip
1
Transistor Material
SiC
Stock information temporarily unavailable.
P.O.A.
onsemi SiC Power SiC N-Channel MOSFET, 142 A, 650 V, 4-Pin TO-247-4 NTH4L015N065SC1
Select packaging type
Standard
1
P.O.A.
onsemi SiC Power SiC N-Channel MOSFET, 142 A, 650 V, 4-Pin TO-247-4 NTH4L015N065SC1
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Please check again later.
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
142 A
Maximum Drain Source Voltage
650 V
Series
SiC Power
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.012 Ω
Maximum Gate Threshold Voltage
4.3V
Number of Elements per Chip
1
Transistor Material
SiC