ROHM BSM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005

RS Stock No.: 144-2257Brand: ROHMManufacturers Part No.: BSM120D12P2C005
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Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

935 W

Number of Elements per Chip

2

Width

45.6mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Length

122mm

Minimum Operating Temperature

-40 °C

Height

17mm

Country of Origin

Japan

Product details

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Stock information temporarily unavailable.

P.O.A.

ROHM BSM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

ROHM BSM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

935 W

Number of Elements per Chip

2

Width

45.6mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Length

122mm

Minimum Operating Temperature

-40 °C

Height

17mm

Country of Origin

Japan

Product details

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor