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Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

RS Stock No.: 171-2405Brand: ToshibaManufacturers Part No.: SSM6K403TU
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

UF6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Number of Elements per Chip

1

Width

2mm

Length

1.7mm

Typical Gate Charge @ Vgs

16.8 nC @ 4 V

Maximum Operating Temperature

+150 °C

Height

0.7mm

Country of Origin

Thailand

Stock information temporarily unavailable.

P.O.A.

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

P.O.A.

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

UF6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Number of Elements per Chip

1

Width

2mm

Length

1.7mm

Typical Gate Charge @ Vgs

16.8 nC @ 4 V

Maximum Operating Temperature

+150 °C

Height

0.7mm

Country of Origin

Thailand