Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
1
P.O.A.
1
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quantity | Unit price |
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10+ | P.O.A. |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details