N-Channel MOSFET, 17 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2

RS Stock No.: 826-8245Brand: InfineonManufacturers Part No.: BSS126H6327XTSA2
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.4 nC @ 5 V

Width

1.3mm

Transistor Material

Si

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

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P.O.A.

N-Channel MOSFET, 17 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2
Select packaging type

P.O.A.

N-Channel MOSFET, 17 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

You may be interested in

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.4 nC @ 5 V

Width

1.3mm

Transistor Material

Si

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

You may be interested in