Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Width
1.3mm
Transistor Material
Si
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Width
1.3mm
Transistor Material
Si
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China