Infineon OptiMOS™ 5 N-Channel MOSFET, 240 A, 80 V, 8-Pin HSOF-8 IAUT240N08S5N019ATMA1

RS Stock No.: 217-2485Brand: InfineonManufacturers Part No.: IAUT240N08S5N019ATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

240 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.9 mO

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1

P.O.A.

Each (In a Pack of 5) (ex VAT)

Infineon OptiMOS™ 5 N-Channel MOSFET, 240 A, 80 V, 8-Pin HSOF-8 IAUT240N08S5N019ATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

Each (In a Pack of 5) (ex VAT)

Infineon OptiMOS™ 5 N-Channel MOSFET, 240 A, 80 V, 8-Pin HSOF-8 IAUT240N08S5N019ATMA1

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

240 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.9 mO

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1