onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor