Taiwan Semi TSM025 Silicon MOSFET, 24 A, 150 V, 8-Pin PDFN56 TSM650N15CR

RS Stock No.: 216-9716PBrand: Taiwan SemiconductorManufacturers Part No.: TSM650N15CR
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Technical documents

Specifications

Brand

Taiwan Semiconductor

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

150 V

Series

TSM025

Package Type

PDFN56

Pin Count

8

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Stock information temporarily unavailable.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Taiwan Semi TSM025 Silicon MOSFET, 24 A, 150 V, 8-Pin PDFN56 TSM650N15CR
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Taiwan Semi TSM025 Silicon MOSFET, 24 A, 150 V, 8-Pin PDFN56 TSM650N15CR
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Taiwan Semiconductor

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

150 V

Series

TSM025

Package Type

PDFN56

Pin Count

8

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon