Vishay EF Series N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK SIHB28N60EF-GE3

RS Stock No.: 177-7628Brand: VishayManufacturers Part No.: SIHB28N60EF-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

EF Series

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor

P.O.A.

Vishay EF Series N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK SIHB28N60EF-GE3

1

Available in multiples of 1000
1P.O.A.
1001P.O.A.
2001P.O.A.
3001P.O.A.
4001P.O.A.
5001P.O.A.
6001P.O.A.
7001P.O.A.
8001P.O.A.
9001P.O.A.
10001P.O.A.
11001P.O.A.
12001P.O.A.
13001P.O.A.
14001P.O.A.

P.O.A.

Vishay EF Series N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK SIHB28N60EF-GE3

Stock information temporarily unavailable.

1

Available in multiples of 1000
1P.O.A.
1001P.O.A.
2001P.O.A.
3001P.O.A.
4001P.O.A.
5001P.O.A.
6001P.O.A.
7001P.O.A.
8001P.O.A.
9001P.O.A.
10001P.O.A.
11001P.O.A.
12001P.O.A.
13001P.O.A.
14001P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

EF Series

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor