Vishay TrenchFET Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 SiR876BDP-T1-RE3

RS Stock No.: 228-2912PBrand: VishayManufacturers Part No.: SiR876BDP-T1-RE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

51.4 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0108 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Transistor Material

Si

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 SiR876BDP-T1-RE3
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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 SiR876BDP-T1-RE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

51.4 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0108 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Transistor Material

Si