Vishay TrenchFET N-Channel MOSFET, 185.6 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSS54DN-T1-GE3

RS Stock No.: 228-2933Brand: VishayManufacturers Part No.: SiSS54DN-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

185.6 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8SH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00106 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

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P.O.A.

Each (In a Pack of 5) (ex VAT)

Vishay TrenchFET N-Channel MOSFET, 185.6 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSS54DN-T1-GE3
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P.O.A.

Each (In a Pack of 5) (ex VAT)

Vishay TrenchFET N-Channel MOSFET, 185.6 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSS54DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

185.6 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK 1212-8SH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00106 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si