Vishay TrenchFET P-Channel MOSFET, 2.2 A, 80 V, 3-Pin SOT-23 SQ2337ES-T1_GE3

RS Stock No.: 180-7399Brand: VishayManufacturers Part No.: SQ2337ES-T1_GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.314 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Country of Origin

China

P.O.A.

Vishay TrenchFET P-Channel MOSFET, 2.2 A, 80 V, 3-Pin SOT-23 SQ2337ES-T1_GE3

1

Available in multiples of 3000
1P.O.A.
3001P.O.A.
6001P.O.A.
9001P.O.A.
12001P.O.A.
15001P.O.A.
18001P.O.A.
21001P.O.A.
24001P.O.A.
27001P.O.A.
30001P.O.A.
33001P.O.A.
36001P.O.A.
39001P.O.A.
42001P.O.A.

P.O.A.

Vishay TrenchFET P-Channel MOSFET, 2.2 A, 80 V, 3-Pin SOT-23 SQ2337ES-T1_GE3

Stock information temporarily unavailable.

1

Available in multiples of 3000
1P.O.A.
3001P.O.A.
6001P.O.A.
9001P.O.A.
12001P.O.A.
15001P.O.A.
18001P.O.A.
21001P.O.A.
24001P.O.A.
27001P.O.A.
30001P.O.A.
33001P.O.A.
36001P.O.A.
39001P.O.A.
42001P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.314 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Country of Origin

China