Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
79 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
8.64mm
Width
10.26mm
Minimum Operating Temperature
-55 °C
Height
4.4mm
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P.O.A.
Standard
1
P.O.A.
Standard
1
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quantity | Unit price |
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25 - 99 | P.O.A. |
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Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
79 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
8.64mm
Width
10.26mm
Minimum Operating Temperature
-55 °C
Height
4.4mm