N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar3
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.89 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
20.29mm
Typical Gate Charge @ Vgs
268 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
26.59mm
Country of Origin
United States
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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P.O.A.
25
P.O.A.
25
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar3
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.89 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
20.29mm
Typical Gate Charge @ Vgs
268 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
26.59mm
Country of Origin
United States
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS