N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002KT1G

RS Stock No.: 780-0478PBrand: onsemiManufacturers Part No.: 2N7002KT1G
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

380 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.01mm

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002KT1G
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Available in multiples of 100.

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100

Available in multiples of 100
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500P.O.A.
600P.O.A.
700P.O.A.
800P.O.A.
900P.O.A.
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1100P.O.A.
1200P.O.A.
1300P.O.A.
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P.O.A.

N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002KT1G
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 100
100P.O.A.
200P.O.A.
300P.O.A.
400P.O.A.
500P.O.A.
600P.O.A.
700P.O.A.
800P.O.A.
900P.O.A.
1000P.O.A.
1100P.O.A.
1200P.O.A.
1300P.O.A.
1400P.O.A.
1500P.O.A.
You may be interested in

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

380 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.01mm

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

You may be interested in