Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G

Brand

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.7mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.1mm

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia