SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1A

RS Stock No.: 205-2501Brand: onsemiManufacturers Part No.: NTHL080N120SC1A
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

SiC

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P.O.A.

SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1A

450

Available in multiples of 450
450P.O.A.
900P.O.A.
1350P.O.A.
1800P.O.A.
2250P.O.A.
2700P.O.A.
3150P.O.A.
3600P.O.A.
4050P.O.A.
4500P.O.A.
4950P.O.A.
5400P.O.A.
5850P.O.A.
6300P.O.A.
6750P.O.A.

P.O.A.

SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1A
Stock information temporarily unavailable.

450

Available in multiples of 450
450P.O.A.
900P.O.A.
1350P.O.A.
1800P.O.A.
2250P.O.A.
2700P.O.A.
3150P.O.A.
3600P.O.A.
4050P.O.A.
4500P.O.A.
4950P.O.A.
5400P.O.A.
5850P.O.A.
6300P.O.A.
6750P.O.A.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

SiC