N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS025N06CLTWG

Brand

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

43 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

5.8 @ 10 V nC

Height

1.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101