Infineon HEXFET Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF

RS Stock No.: 222-4732Brand: InfineonManufacturers Part No.: IRF1010ESTRLPBFDistrelec Article No.: 30284002
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

P.O.A.

Each (On a Reel of 800) (ex VAT)

Infineon HEXFET Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF

800

Available in multiples of 800
800P.O.A.
1600P.O.A.
2400P.O.A.
3200P.O.A.
4000P.O.A.
4800P.O.A.
5600P.O.A.
6400P.O.A.
7200P.O.A.
8000P.O.A.
8800P.O.A.
9600P.O.A.
10400P.O.A.
11200P.O.A.
12000P.O.A.

P.O.A.

Each (On a Reel of 800) (ex VAT)

Infineon HEXFET Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF

Stock information temporarily unavailable.

800

Available in multiples of 800
800P.O.A.
1600P.O.A.
2400P.O.A.
3200P.O.A.
4000P.O.A.
4800P.O.A.
5600P.O.A.
6400P.O.A.
7200P.O.A.
8000P.O.A.
8800P.O.A.
9600P.O.A.
10400P.O.A.
11200P.O.A.
12000P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon