Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
680mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
6.6mm
Height
2.17mm
Automotive Standard
No
Product Details
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
680mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
6.6mm
Height
2.17mm
Automotive Standard
No
Product Details
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
