Diodes Inc Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 2N7002DW-7-F

RS Stock No.: 708-2529Brand: DiodesZetexManufacturers Part No.: 2N7002DW-7-F
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Technical documents

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.2mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

P.O.A.

Diodes Inc Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 2N7002DW-7-F
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 25
1P.O.A.
26P.O.A.
51P.O.A.
76P.O.A.
101P.O.A.
126P.O.A.
151P.O.A.
176P.O.A.
201P.O.A.
226P.O.A.
251P.O.A.
276P.O.A.
301P.O.A.
326P.O.A.
351P.O.A.

P.O.A.

Diodes Inc Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 2N7002DW-7-F

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 25
1P.O.A.
26P.O.A.
51P.O.A.
76P.O.A.
101P.O.A.
126P.O.A.
151P.O.A.
176P.O.A.
201P.O.A.
226P.O.A.
251P.O.A.
276P.O.A.
301P.O.A.
326P.O.A.
351P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.2mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.