N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 Diodes Inc BSS123-7-F

RS Stock No.: 738-4926PBrand: DiodesZetexManufacturers Part No.: BSS123-7-F
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

China

Product details

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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P.O.A.

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 Diodes Inc BSS123-7-F
Select packaging type

P.O.A.

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 Diodes Inc BSS123-7-F
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

China

Product details

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.