N-Channel MOSFET, 12.2 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1008UFDF-7

RS Stock No.: 182-6884Brand: DiodesZetexManufacturers Part No.: DMN1008UFDF-7
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

12.2 A

Maximum Drain Source Voltage

12 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

12.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Length

2.05mm

Typical Gate Charge @ Vgs

23.4 nC @ 8 V

Width

2.05mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

0.58mm

Country of Origin

China

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P.O.A.

N-Channel MOSFET, 12.2 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1008UFDF-7

P.O.A.

N-Channel MOSFET, 12.2 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1008UFDF-7
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

12.2 A

Maximum Drain Source Voltage

12 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

12.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Length

2.05mm

Typical Gate Charge @ Vgs

23.4 nC @ 8 V

Width

2.05mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

0.58mm

Country of Origin

China