N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 Diodes Inc DMN2004K-7

RS Stock No.: 708-2425PBrand: DiodesZetexManufacturers Part No.: DMN2004K-7
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1.1mm

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 Diodes Inc DMN2004K-7
Select packaging type

P.O.A.

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 Diodes Inc DMN2004K-7
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1.1mm

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.