Diodes Inc N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMN2075U-7

RS Stock No.: 751-4143PBrand: DiodesZetexManufacturers Part No.: DMN2075U-7
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

800 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Length

3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

China

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Diodes Inc N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMN2075U-7
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Diodes Inc N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMN2075U-7

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

800 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Length

3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

China

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.