Diodes Inc N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 DMN2450UFD-7

RS Stock No.: 182-6892Brand: DiodesZetexManufacturers Part No.: DMN2450UFD-7
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.25mm

Length

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.48mm

Country of Origin

China

Stock information temporarily unavailable.

P.O.A.

Diodes Inc N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 DMN2450UFD-7

P.O.A.

Diodes Inc N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 DMN2450UFD-7
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.25mm

Length

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.48mm

Country of Origin

China