N-Channel MOSFET, 8 A, 60 V, 3-Pin SOT-223 Diodes Inc DMN6069SE-13

RS Stock No.: 182-6900Brand: DiodesZetexManufacturers Part No.: DMN6069SE-13
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

11 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

6.55mm

Typical Gate Charge @ Vgs

16 nC @ 10V

Width

3.55mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Height

1.65mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

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P.O.A.

N-Channel MOSFET, 8 A, 60 V, 3-Pin SOT-223 Diodes Inc DMN6069SE-13

P.O.A.

N-Channel MOSFET, 8 A, 60 V, 3-Pin SOT-223 Diodes Inc DMN6069SE-13
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

11 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

6.55mm

Typical Gate Charge @ Vgs

16 nC @ 10V

Width

3.55mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Height

1.65mm

Minimum Operating Temperature

-55 °C

Country of Origin

China