N-Channel MOSFET, 407 mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

RS Stock No.: 182-6901Brand: DiodesZetexManufacturers Part No.: DMN62D1LFB-7B
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

407 mA

Maximum Drain Source Voltage

60 V

Package Type

X1-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

1.07mm

Typical Gate Charge @ Vgs

0.45 nC @ 4.5V

Width

0.67mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

0.48mm

Country of Origin

China

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P.O.A.

N-Channel MOSFET, 407 mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

P.O.A.

N-Channel MOSFET, 407 mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

407 mA

Maximum Drain Source Voltage

60 V

Package Type

X1-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

1.07mm

Typical Gate Charge @ Vgs

0.45 nC @ 4.5V

Width

0.67mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

0.48mm

Country of Origin

China